Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1990-06-07
1992-03-03
Beck, Shrive
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 39, 427 38, 427164, 4272553, 4272552, 4272551, 427307, 427316, 427 451, B05D 306, B05D 506
Patent
active
050931520
DESCRIPTION:
BRIEF SUMMARY
The present invention relates to a process for protecting an optical substrate by plasma deposition.
In the microelectronic field, it is known to deposit by means of silanes amorphous compounds of silicon on crystalline silicon within a plasma at temperatures exceeding 200.degree. C.
In the manufacture of holographic supports, it is known to achieve certain thin layers by plasma deposition, as described in the U.S. Pat. No. 4,330,604.
In the automobile industry, it is of particular interest to be able to replace glass, in particular for the glasses of headlight optical elements, by polymeric compounds which are lighter and more adapted to the elongated and rounded shapes of automobile accessories. However it is necessary to protect these polymeric compounds against chemical and mechanical attack by means of a transparent coating which has a suitable mechanical and thermal resistance. The patent application WO 85/04601 describes the realization of such a coating in two steps, i.e. a coating of the substrate to be protected by dipping in a silicone resin, then a hot polymerization of the coating.
For the manufacture of an information support for the electronic and data processing fields, for example magnetic supports, it is advantageous to provide the support with an essentially hard and antistatic coating.
The present invention is the discovery of a process it is possible to obtain hard, transparent, inorganic polymer deposits which resist thermal variations and humidity and are antistatic.
The present invention applies a protective coating for a substrate, of the type comprising essentially silicon, carbon, nitrogen, oxygen and hydrogen, having the formula SiC.sub.x N.sub.y O.sub.z H.sub.t, in which
These coatings are obtained by a plasma deposition process for the deposition of a continuous and transparent film of an amorphous inorganic compound of the type comprising essentially the elements silicon, carbon, nitrogen, oxygen and hydrogen, characterized in that the surface of the substrate is exposed to a plasma at a temperature lower than the vitreous transition temperature of the substrate in the presence of gaseous precursors of these elements, the gaseous precursors coming from the substrate or extraneous sources.
The devices for practicing methods according to the invention for the plasma deposition of inorganic coatings on a substrate are characterized in that they comprise at least one sealed deposition enclosure connected in a sealed manner to at least two homogeneous injection paths at least one of which is provided with a means for forming a plasma, said enclosure comprising a homogeneous gas discharge orifice connected in a sealed manner to means for creating a depression in the enclosure, and a support for the substrate.
Homogeneous injection and discharge are intended to mean injections and discharges achieved in such manner that the gaseous composition is identical at any point of the surface to be coated.
The gaseous plasma may in accordance with the invention be produced by any known means and in particular by a radio-frequency excitation source or a microwave, for example.
The gas in which the plasma is created is a conventional plasma forming gas, such as for example the rare gases of the air for example argon or neon, or helium, or hydrogen and mixtures thereof.
However, it is also possible in accordance with the invention to create the plasma with the precursor gas, for example with the nitrogen, ammonia or oxygen.
The precursor gas of an element is intended to mean according to the invention a gas which contains this element and is capable of liberating it within the plasma. The different elements liberated by the different precursors are recombined to form the inorganic deposit. The elements therefore come from extraneous sources.
The gas which is the precursor of oxygen and/or nitrogen may be chosen in particular among O.sub.2, N.sub.2 O, N.sub.2 and NH.sub.3, and there may be chosen as the precursor of carbon methane or ethane or CO.sub.2. The precursor may be employed alone as pla
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"Thin Si Films Can Form at Room Temperature", Electronics, vol. 54(22), Nov. 1981, p. 82.
Tsu et al., "Silicon Nitride and Silicon Dimide Grown by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol. A, vol. 4(3), May 1986, pp. 480-485.
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Bonet Claude
Coeuret Francois
Gauthier Jean-Marie
Nowak Sylvie
Beck Shrive
King Roy V.
L'Air Liquide Societe Anonyme pour l'Etude et, l'Exploitation de
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