Process for production of stacked capacitor of semiconductor dev

Details Process for production of stacked capacitor of semiconductor dev Process for production of stacked capacitor of semiconductor dev

1993-12-23

1995-02-14

Fourson, George

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053895606

ABSTRACT:
A process for production of a stacked capacitor of a semiconductor device. This process achieves security of a sufficient capacitance of the capacitor of the semiconductor device having a high integration degree as well as a desired reliability of the semiconductor device. In accordance with this process, first and second mask polysilicon layers, which are used in opening of a storage node contact, are used in forming of a contact and also used as conductive layers for charge storage electrodes. The process of this invention provides the capacitor of the semiconductor device with a larger storage node capacitance in a relatively smaller cell area, using the characteristic of a higher etching selection ratio (about 30:1) of an oxide layer to a polysilicon layer and of a higher etching selection ratio (not less than 30:1) of the polysilicon layer to a nitride layer.

REFERENCES:
patent: 5268322 (1993-12-01), Lee et al.

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