Process for production of silicon single crystal

Details Process for production of silicon single crystal Process for production of silicon single crystal

2008-05-23

2011-10-25

Pyon, Harold (Department: 1761)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S011000, C117S013000, C117S019000, C117S073000, C117S074000

Reexamination Certificate

active

08043428

ABSTRACT:
In growing a silicon monocrystal from a silicon melt added with an N-type dopant by Czochralski method, the monocrystal is grown such that a relationship represented by a formula (1) as follows is satisfied. In the formula (1): a dopant concentration in the silicon melt is represented by C (atoms/cm3); an average temperature gradient of the grown monocrystal is represented by Gave(K/mm); a pulling-up speed is represented by V (mm/min); and a coefficient corresponding to a kind of the dopant is represented by A. By growing the silicon monocrystal under a condition shown in the left to a critical line G1, occurrence of abnormal growth due to compositional supercooling can be prevented.GaveV>A·C-43(1)

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English Language International Search Report dated Jul. 1, 2008 issued in parent Appln. No. PCT/JP2008/059510.

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