Plastic and nonmetallic article shaping or treating: processes – Outside of mold sintering or vitrifying of shaped inorganic... – Including plural heating steps
Patent
1999-05-28
2000-08-08
Derrington, James
Plastic and nonmetallic article shaping or treating: processes
Outside of mold sintering or vitrifying of shaped inorganic...
Including plural heating steps
676683, C04B 35587
Patent
active
06099794&
ABSTRACT:
A silicon nitride sintered material includes silicon nitride and rare earth element compounds. Y and Yb are contained as the rare earth elements in a total amount of 5-7 mole % in terms of oxides, Yb/Y is 4/6 to 9/1 in terms of molar ratio of oxides, and the crystal phases of grain boundary contain a H phase and a J phase with the proportion of the H phase being larger than that of the J phase. A process for producing a silicon nitride sintered material includes the steps of mixing a Si.sub.3 N.sub.4 powder with Y.sub.2 O.sub.3 and Yb.sub.2 O.sub.3 both as a sintering aid, the total amount of Y.sub.2 O.sub.3 and Yb.sub.2 O.sub.3 being 5-7 mole % and the molar ratio of Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 being 4/6 to 9/1, molding the resulting mixture, sintering the molded material in a nitrogen atmosphere at 1,850-1,950.degree. C., and heat-treating the sintered material in air at 1,000-1,500.degree. C. for 0.5-10 hours. The silicon nitride sintered material has, in a small or large thickness, oxidation resistance and strength at low temperatures while retaining high strength at high temperatures.
REFERENCES:
patent: 5096859 (1992-03-01), Sakai et al.
patent: 5118644 (1992-06-01), Watanabe et al.
patent: 5316856 (1994-05-01), Suzuki et al.
patent: 5545597 (1996-08-01), Yeckley
patent: 5631200 (1997-05-01), Ukegawa et al.
patent: 5691261 (1997-11-01), Takahashi et al.
Patent Abstracts of Japan, Publication No. 6-227866, Publication Date: Aug. 16, 1994.
M. Isomura et al. "High-strength silicon nitride ceramics and their manufacture", Chemical Abstracts, vol. 118, No. 8, Abstract No. 65444, Feb. 22, 1993.
Aihara Yasufumi
Inoue Katsuhiro
Derrington James
NGK Insulators Ltd.
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