Process for production of III-V compound epitaxial crystals

Details Process for production of III-V compound epitaxial crystals Process for production of III-V compound epitaxial crystals

1973-12-13

1976-08-17

Satterfield, Walter R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148174, 148176, H01L 736

Patent

active

039752186

ABSTRACT:
A method of forming and epitaxially depositing III-V compound crystals which comprises interacting two gaseous mixtures in the absence of oxidizing gas and hydrogen carrier gas, one mixture being formed by contacting a stream of an inert carrier gas with a gaseous trihalide of a Group III element and thereafter contacting that mixture with the same Group III element, the second mixture being formed by contacting a stream of an inert carrier gas with a Group V element or a volatile Group V compound.

REFERENCES:
patent: 3218205 (1965-11-01), Ruehrwein
patent: 3224913 (1965-12-01), Ruehrwein
patent: 3312570 (1967-04-01), Ruehrwein
patent: 3364084 (1968-01-01), Ruehrwein
patent: 3462323 (1969-08-01), Groves
patent: 3493811 (1970-02-01), Ewing
patent: 3508126 (1970-04-01), Newman et al.
patent: 3635771 (1972-01-01), Shaw

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