Process for production of III-V compound crystals

Details Process for production of III-V compound crystals Process for production of III-V compound crystals

1976-04-27

1977-03-01

Satterfield, Walter R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, H01L 736

Patent

active

040100456

ABSTRACT:
A method of forming and epitaxially depositing III-V compound crystals which comprises interacting two gaseous mixtures in the absence of oxidizing gas and hydrogen carrier gas, one mixture being formed by contacting a stream of an inert carrier gas with a gaseous trihalide of a Group III element and thereafter contacting that mixture with the same Group III element, the second mixture being formed by contacting a stream of an inert carrier gas with a Group V element or a volatile Group V compound.

REFERENCES:
patent: 3312571 (1967-04-01), Ruehrwein
patent: 3893876 (1975-07-01), Akai et al.
patent: 3930908 (1976-01-01), Jolly

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