Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing
Patent
1988-03-17
1989-08-01
Doll, John
Chemistry of inorganic compounds
Silicon or compound thereof
Oxygen containing
C01B 312
Patent
active
048531987
ABSTRACT:
There is disclosed a process for producing unsintered cristobalite silica by heating an amorphous silica in the presence of an alkali component, which comprises heating an amorphous silica having a specific surface area (measured according to BET method) of 50 m.sup.2 /g or more at a temperature in the range of 1000.degree. to 1300.degree. C., in the presence of an alkali metal element in a concentration of 5 to 600 ppm to said silica to change it partially or completely into cristobalite and then heating at a temperature of exceeding 1300.degree. C. to eliminate alkali.
REFERENCES:
patent: 4395388 (1983-07-01), Kaduk
patent: 4683128 (1987-07-01), Orii et al.
patent: 4738838 (1988-04-01), Shinpo et al.
Ohshima Iwao
Orii Koichi
Watanabe Naotake
Doll John
Freeman Lori S.
Mitsubishi Rayon Co. Ltd.
Nitto Chemical Industry Co., Ltd
LandOfFree
Process for producing unsintered cristobalite silica does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing unsintered cristobalite silica, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing unsintered cristobalite silica will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-130156