Process for producing undercut dummy gate mask profiles for MESF

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437176, 156633, H01L 21265

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047328711

ABSTRACT:
Process for producing temperature-stable undercut profiles for use in semiconductor fabrication. The process is based on the phenomenon of high etch-rate selectivity between RF- and LF- PECVD-grown silicon nitride films (12G and 13G, respectively) that are deposited on top of each other. By choosing proper film and process parameters, these PECVD nitride structures can be made stress-free: the tensile stress of the RF film (12G) compensates the compressive stress of the LF film (13G).
Also disclosed is an application of a T-shaped structure (15), produced with the new process, in a method for fabricating fully self-aligned "dummy" gate sub-micron MESFETs.

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