Process for producing thin single crystal silicon islands on ins

Details Process for producing thin single crystal silicon islands on ins Process for producing thin single crystal silicon islands on ins

1988-01-25

1992-02-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437228, 437247, 156643, 156657, 148DIG135, 148DIG12, H01L 21302

Patent

active

050860119

ABSTRACT:
A semiconductor fabrication process uses an epitaxial layer as an etch stop in a plasma etch process. In one embodiment, mechanical stops and an epitaxial layer are used in combination for stopping precisely at a desired end point.

REFERENCES:
Su, S. C., "Low-Temperature . . . ", Solid State Technol., pp. 72-82, Mar. 1981.

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