Process for producing thin film by epitaxial growth

Details Process for producing thin film by epitaxial growth Process for producing thin film by epitaxial growth

1993-03-02

1995-07-18

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437105, 437125, 437126, 437133, 117 56, 117 89, 117105, 148 33, H01L 2120

Patent

active

054341019

ABSTRACT:
In the manufacture of a single crystal film by epitaxial growth method, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4.about.9).times.10.sup.-4 %/.mu.m.

REFERENCES:
patent: 4269651 (1981-05-01), Glass et al.
patent: 4605600 (1974-08-01), Niigaki et al.
Tolksdorf et al. "Controlled lattice constant mismatch by compositional changes in LPE grown single crystal films of rare earth . . . Garnets on GGG substrates", Journal of Crys. Growth, vol. (17), 1972, pp. 322-328.

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