Process for producing thin film by epitaxial growth

Details Process for producing thin film by epitaxial growth Process for producing thin film by epitaxial growth

1994-10-17

1997-09-02

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

117 54, 117 89, C30B 2102

Patent

active

056627408

ABSTRACT:
In the manufacture of a single crystal film by epitaxial growth method, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4.about.9).times.10.sup.-4 %/.mu.m.

REFERENCES:
patent: 4265980 (1981-05-01), Bonner et al.
patent: 4269651 (1981-05-01), Glass et al.
Tolksdorf, et al. "Controlled Lattice Constant Mismatch by Compositional Changes in Liquid Phase Epitaxially Grown Single Crystal Films of Rare Earth Yttrium Iron Gallium Garnets on Gadolinium Gallium Garnet Substrates"; Journal of Cryst. Growth vol. (17), 1972, pp. 322-328.

Affiliated with

Also associated with

Rating

Process for producing thin film by epitaxial growth does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing thin film by epitaxial growth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing thin film by epitaxial growth will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-304843