Metal treatment – Stock – Magnesium base
Patent
1996-07-18
1999-09-28
Nguyen, Nam
Metal treatment
Stock
Magnesium base
420402, 359580, 20419212, 20419226, 20419229, 20429809, C22C 2300
Patent
active
059581557
ABSTRACT:
A substrate (2) is rotatably installed in a vacuum chamber (1) at an upper part thereof MgF.sub.2 granules (3) as a film source material are placed in a quartz boat (4) and mounted on a magnetron cathode (5). The magnetron cathode (5) is connected through a matching box (6) to a 13.56 MHz radio frequency power source (7). Cooling water (8) for holding the temperature of the magnetron cathode (5) constant flows against a lower face of the magnetron cathode (5). A side wall of the vacuum chamber (1) is provided with gas introduction ports (9), (10) for introducing gas in the vacuum chamber (1). A shutter (11) is placed between the magnetron cathode (5) and the substrate (2). This structure provides a process enabling forming a thin film at a high speed by sputtering, especially a high speed sputtering process enabling forming a thin fluoride film free of light absorption.
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patent: 5372874 (1994-12-01), Dickey et al.
patent: 5513038 (1996-04-01), Abe
C.W. Pitt et al, Thin Solid Films, vol. 26, pp. 25-51 (1975).
Vacuum, Dec. 1985. UK., vol. 35, No. 12, "Thin films prepared by sputtering MgF/sub 2/ in an RF planar magentron".
Journal of Applied Physics, Oct. 1993., U.S.A., vol. 74, No. 8, "Radio frequency sputter depostiton and properties of calcium fluoride thin films".
Journal of Materials Science Letters, Aug. 1994, UK., vol. 13, No. 16, Temperature dependence of sputtering yield of GaAs under 30 keV ar/sup +bombardment..
Kawamata Ken
Mitamura Nobuaki
Nguyen Nam
Olympus Optical Co,. Ltd.
VerSteeg Steven H.
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