Process for producing thermal shock-resistant silicon nitride si

Details Process for producing thermal shock-resistant silicon nitride si Process for producing thermal shock-resistant silicon nitride si

1991-11-05

1993-07-20

Derrington, James

Plastic and nonmetallic article shaping or treating: processes

Pore forming in situ

Of inorganic materials

264 43, 264 65, 501 80, 501 85, 501 92, 501 97, C04B 3800

Patent

active

052290468

ABSTRACT:
There is provided a thermal shock-resistant silicon nitride sintered material including silicon nitride and rare earth element compounds, which material contains at least 10 pore groups per mm.sup.2, each pore group consisting of pores of 10 or less in diameter and which material has a thermal shock resistance .DELTA.Tc (.degree.C.) of 1,000.degree. C. or more. The thermal shock-resistant silicon nitride sintered material can be produced by mixing and shaping starting materials consisting of silicon nitride powders of rare earth element oxides and carbide powder, and then firing the shaped material in a nitrogen atmosphere to decompose the carbide powders.

REFERENCES:
patent: 3833389 (1974-09-01), Komeya et al.
patent: 3969125 (1976-07-01), Komeya et al.
patent: 4097293 (1978-06-01), Komeya et al.
patent: 4795724 (1989-01-01), Soma et al.

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