Process for producing surface emitting laser, process for...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S031000, C438S032000, C372S046013, C372S045011, C257SE33067, C257SE21002

Reexamination Certificate

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07807485

ABSTRACT:
Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.

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H.J. Unold et al., “Increased-area oxidised single-fundamental mode VCSEL with self-aligned shallow etched surface relief,” Electronics Letters, vol. 35, No. 16, Aug. 5, 1999.

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