Etching a substrate: processes – Forming or treating article containing magnetically...
Reexamination Certificate
2007-10-30
2007-10-30
Culbert, Roberts (Department: 1763)
Etching a substrate: processes
Forming or treating article containing magnetically...
C216S102000, C216S103000, C428S846400
Reexamination Certificate
active
11086423
ABSTRACT:
A process for producing a structure having a porous layer is provided. The process forms the porous layer with high thickness-controllability. The process comprises steps of preparing a layered product having, on a substrate, a first nonporous layer and a second nonporous layer different in constituting material composition from the first layer; anodizing the layered product to form pores in the first nonporous layer and the second nonporous layer; and removing the second nonporous layer having pores formed therein from the layered product.
REFERENCES:
patent: 6107213 (2000-08-01), Tayanaka
patent: 6214701 (2001-04-01), Matsushita et al.
patent: 04319412 (1992-11-01), None
Li, et al., “Hexagonal pore arrays with a 50-420 nm interpore distance formed by self-organization in anodic alumina”, J. Appl. Phys., vol. 84, No. 11, 6023-6026 (1998).
Furneau et al., “The formation of controlled-porosity membranes from anodically oxidized aluminum”, Nature, vol. 337, No. 6203, 147-149 (1989).
Masuda et al., “Fabrication of Gold Nanodot Array Using Anodic Porous Alumina as an Evaporation Mask”, Japan, J. Appl. Phys., vol. 35, Part 2, No. 1B, 125-129 (1996).
Den Tohru
Imada Aya
Saito Tatsuya
Canon Kabushiki Kaisha
Culbert Roberts
Fitzpatrick ,Cella, Harper & Scinto
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