Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1997-04-17
1999-09-14
Niebling, John F.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
H01G 900
Patent
active
059517212
ABSTRACT:
A thick layer of polyaniline is evenly and efficiently deposited on the surface as well as the edges of an anode porous metal. A porous film-forming metal or porous valve metal is immersed in an anilinum protonic salt solution of a high temperature and a high concentration, thereafter, anilinum protonic salt crystals are deposited on the surface of the porous metal by cooling the porous metal to or below the dissolution temperature of the solution, and the porous metal is immersed in an oxidant solution.
REFERENCES:
patent: 3950842 (1976-04-01), Fournier et al.
patent: 4046645 (1977-09-01), Yoshida et al.
patent: 4622109 (1986-11-01), Puppolo
patent: 5567209 (1996-10-01), Kobayashi et al.
patent: 5855755 (1999-01-01), Murphy et al.
Date Tomohide
Fukaumi Takashi
Kobayashi Atsushi
Yageta Hiroshi
Jones Josetta
NEC Corporation
Niebling John F.
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