Process for producing single crystals

Details Process for producing single crystals Process for producing single crystals

1998-10-01

2000-09-05

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 32, 117917, C30B 1520

Patent

active

061136883

ABSTRACT:
A method of growing a single crystal, comprises pulling a single crystal from molten material in a crucible by the Czochralski method; simultaneously applying an axially symmetric, radial cusp magnetic field to the molten material; and simultaneously heating the crucible from both the bottom and the sides; where a ratio of the heating from the bottom of the crucible, q, to the total heating of the crucible, Q, is q/Q, and during the pulling the ratio q/Q changes. The concentration of oxygen in the pulling direction of the crystal may be accurately controlled, and is uniform.

REFERENCES:
patent: 5132091 (1992-07-01), Azad
patent: 5162092 (1992-11-01), Azad
patent: 5360599 (1994-11-01), Cueman et al.
patent: 5868832 (1999-02-01), Begg

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