Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-02-27
1997-11-04
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 13, 117 31, 117313, 117217, C30B 1520
Patent
active
056835051
ABSTRACT:
A process for producing single crystals with little OSF generation and excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the silicon single crystal in the direction of pulling. The process is carried out with an apparatus including a crucible which contains the melt of the single crystal material, a heating element which heats the melt, a pulling shaft to grow the single crystal, a protective gas inlet pipe, and a chamber which contains all above mentioned components. In addition, the apparatus is provided with a circular cylinder or a conical shaped heat resistant and heat insulating component below the protective gas inlet pipe. In the process of producing single crystals, the single crystal is pulled up through the circular cylinder or conical shaped heat resistant and heat insulating component below the protective gas inlet pipe, and while the pulled-up crystal is at high temperature the temperature gradient is held small and when the crystal is cooled to low temperature the temperature gradient is increased.
REFERENCES:
patent: 4097329 (1978-06-01), Stock et al.
patent: 4330361 (1982-05-01), Kuhn-Kuhnenfeld et al.
patent: 4330362 (1982-05-01), Zulehner
patent: 5196173 (1993-03-01), Arai et al.
patent: 5264189 (1993-11-01), Yamashita et al.
patent: 5361721 (1994-11-01), Tokano et al.
patent: 5363795 (1994-11-01), Takawo et al.
patent: 5363796 (1994-11-01), Kobayashi et al.
patent: 5373805 (1994-12-01), Takano et al.
Influence of Thermal History in CZ Crystal Growth Process on Dielectric Strength of Gate Oxide Films, Y. Komatsu, T. Aoki, E. Kajita, M. Sano and T. Shigematsu, Extended Abstracts No. 30p-ZD-17, (The 39th Spring Meeting, Mar. 28-31, 1992); No. 1, The Japan Society of Applied Physics and Related Societies.
Studies on Crystal Growing Conditions Concerning with Vox Failure, K. Kitagawa, K. Yamashita, Y. Komatsu, K. Sano, N. Fujino and H. Murakami, Extended Abstracts No. 30P-ZL-8, (The 39th Spring Meeting, Mar. 28-31, 1991); No. 1, the Japan Society of Applied Physics and Related Societies.
Kuramochi Kaoru
Okamoto Setsuo
Garrett Felisa
Sumitomo Sitix Corporation
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