Single-crystal – oriented-crystal – and epitaxy growth processes; – Organic compound containing single-crystal {c30b 29/54} – Tartrate containing (e.g. – rochelle salt) {c30b 29/56}
Patent
1996-12-19
1999-07-20
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Organic compound containing single-crystal {c30b 29/54}
Tartrate containing (e.g., rochelle salt) {c30b 29/56}
117213, 117214, 117218, C30B 1510
Patent
active
059251476
ABSTRACT:
A process for producing single crystals has been presented which enables the pulling up and growing of single crystals, without loss of accurate control of the oxygen concentration in the crystal, and with excellent dielectric strength of subsequently produced gate oxide films. The process of producing single crystals in accordance with this invention is characterized by confluence of the inert gas flows (33 and 32) once divided into outside and inside a heat resistant and heat insulative component (7).
REFERENCES:
patent: 5004519 (1991-04-01), Harir
patent: 5264189 (1993-11-01), Yamashita et al.
patent: 5363796 (1994-11-01), Kobayashi et al.
patent: 5441014 (1995-08-01), Tomioka et al.
patent: 5450814 (1995-09-01), Shimishi et al.
patent: 5476065 (1995-12-01), Ikezawa et al.
Patent Abstracts of Japan, vol. 15, No. 500 (C-895), Jan. 24, 1990 & JP 03 218994 A (Mitsubishi Materials Corp.), Sep. 26, 1991, (Abstract).
Garrett Felisa
Sumitomo Sitix Corporation
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