Process for producing single crystal silicon wafers

Details Process for producing single crystal silicon wafers Process for producing single crystal silicon wafers

2006-07-18

2006-07-18

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

C117S056000, C117S058000, C117S063000, C117S934000

Reexamination Certificate

active

07077901

ABSTRACT:
A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.

REFERENCES:
patent: 4584073 (1986-04-01), Lahoda et al.
patent: 5144409 (1992-09-01), Ma
patent: 5176885 (1993-01-01), Impink et al.
patent: 5891242 (1999-04-01), Pesklak et al.
patent: 5917195 (1999-06-01), Brown
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 2003/0034505 (2003-02-01), Stengel et al.
patent: 10-189924 (1998-07-01), None
Capinski et al., “Thermal conductivity of isotopically enriched Si”, Applied Physcis letters, vol. 71(15) Oct. 13, 1997 pp. 2109-2111.
“Single-Isotope Silicon Helps Chips Keep Their Cool,”Max Plank Society, Research News Release(May 10, 2000).

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