Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-06-26
2007-06-26
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S014000, C117S201000, C117S900000
Reexamination Certificate
active
11005180
ABSTRACT:
A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1,L2,L3) between the allowable temperature difference (ΔT) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (ΔT) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1,L2,L3), the allowable temperature difference (ΔT) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined. Temperature control is conducted so that at the time the seed crystal (14) is immersed in the melt (5) the temperature difference between the seed crystal (14) and the melt (5) falls within the determined allowable temperature difference (ΔT).
REFERENCES:
patent: 5785758 (1998-07-01), Yamagishi et al.
patent: 6042644 (2000-03-01), Kurosaka et al.
patent: 6042646 (2000-03-01), Ishikawa et al.
patent: 05294783 (1993-11-01), None
patent: 11-189488 (1999-07-01), None
patent: 11-302096 (1999-11-01), None
patent: 2001-106593 (2001-04-01), None
patent: WO 97/32059 (1997-09-01), None
Inagaki Hiroshi
Kawashima Shigeki
Kurosaka Shoei
Maeda Susumu
Nakamura Kozo
Hiteshew Felisa
Komatsu Denshi Kinzoku Kabushiki Kaisha
Welsh & Katz Ltd
LandOfFree
Process for producing single-crystal semiconductor and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing single-crystal semiconductor and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing single-crystal semiconductor and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3866628