Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Patent
1994-09-07
1995-12-26
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
117948, C30B 3002
Patent
active
054778077
ABSTRACT:
There has been provided by the present invention a process for producing a single crystal of potassium niobate which comprises disposing a positive electrode directly or via a semi-insulating substance layer on one c-plane of a single crystal of potassium niobate and also a negative electrode via a semi-insulating substance layer on the other c-plane of the single crystal of potassium niobate, said positive and negative electrodes being disposed in mutually facing relationship, and applying voltage between the positive and negative electrodes so as to pole (convert to the single-domain state) the single crystal of potassium niobate, and which enables to pole the entire region of the single crystal of potassium niobate without quality deterioration.
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patent: 5043622 (1991-08-01), Sagong et al.
patent: 5247601 (1993-09-01), Myers et al.
"Preparation of potassium niobate single crystal for optical applications", Chem Abst vol. 76, No. 16, 1972, pp. 523-524.
Mori Hiroshi
Takemura Shuji
Yamada Kazuhiro
Kunemund Robert
Mitsui Petrochemical Industries Ltd.
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