Process for producing single crystal of compound...

Details Process for producing single crystal of compound... Process for producing single crystal of compound...

2006-01-24

2006-01-24

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

C117S217000, C117S218000, C117S222000

Reexamination Certificate

active

06989059

ABSTRACT:
In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).

REFERENCES:
patent: 5047112 (1991-09-01), Ciszek
patent: 5840115 (1998-11-01), Taguchi et al.
patent: 6447602 (2002-09-01), Beswick
patent: 2005/0118739 (2005-06-01), Asashi et al.
patent: 60-118699 (1985-06-01), None
patent: 62-59598 (1987-03-01), None
patent: 6-271395 (1994-09-01), None
patent: 2004-099333 (2004-04-01), None

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