Process for producing single-crystal gallium nitride

Details Process for producing single-crystal gallium nitride Process for producing single-crystal gallium nitride

2007-11-13

2007-11-13

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S077000, C117S081000, C117S082000, C117S083000, C117S011000, C117S952000

Reexamination Certificate

active

10892131

ABSTRACT:
A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6×104atm. and 10×104atm. and at a high temperature between 2,200° C. and 2,500° C. and then slowly cooling the obtained gallium nitride melt at the stated high pressure.

REFERENCES:
patent: 6110809 (2000-08-01), Sze et al.
patent: 6270569 (2001-08-01), Shibata et al.
patent: 7112826 (2006-09-01), Motoki et al.
Balkas et al, “Growth and characterization of GaN single crystals”, Journal of Crystal Growth 208 (2000) p. 100-106.
Davydov et al, “Thermodynamic Assessment of the Gallium-Nitrogen System”, Phys. Stat. Sol. (a) 188, No. 1, p. 407-410 (2001).
W. Utsumi, et al., “Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth,”Nature Materials, vol. 2, Nov. 2003, pp. 735-738.

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