Process for producing single crystal diamond film

Details Process for producing single crystal diamond film Process for producing single crystal diamond film

1996-07-11

1999-01-26

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 95, 117929, C30B 2904

Patent

active

058633243

ABSTRACT:
Provided is a process for economically producing single crystal diamond film with a large surface area by gas-phase synthesis. The process comprises depositing platinum film or platinum alloy film containing more than 50 atomic % of platinum on a basal substrate with (111) or (001) surface while keeping the substrate temperature at 300.degree. C. or above, annealing the platinum or platinum alloy film at 1000.degree. C. or above, and performing the gas-phase synthesis of diamond using said platinum or platinum alloy film as the substrate.

REFERENCES:
patent: 5397428 (1995-03-01), Stoner et al.
Patent Abstracts of Japan, vol. 18, No. 664 (C-1288)(7004), p. 68 & JP 6-263593 A.

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