Process for producing single-crystal bulk zinc selenide

Details Process for producing single-crystal bulk zinc selenide Process for producing single-crystal bulk zinc selenide

1995-01-23

1996-09-10

Garrett, Felisa C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117 1, C30B 1114

Patent

active

055542190

ABSTRACT:
When producing a single-crystal bulk ZnSe from a melt by a high-pressure melt technique in a vertical Bridgman (VB) furnace or a vertical gradient freezing (VGF) furnace, preliminarily grown polycrystalline ZnSe (which may be a crystal solely composed of twins) is used as a seed and, after melting the starting ZnSe material and part of the seed, a twin-free ZnSe bulk crystal is grown on the seed; alternatively, polycrystalline ZnSe is grown at the tip of the growing crystal and part of it is melted, followed by growing a single crystal on that polycrystal to produce a twin-free, high-purity ZnSe bulk crystal. In either way, the process assures that twin-free single crystals of bulk ZnSe can be produced with good reproducibility without adding dopants or using any materials that are difficult to obtain.

REFERENCES:
patent: 4983249 (1991-01-01), Taguchi et al.
patent: 5169799 (1992-12-01), Taguchi et al.
J. Cryst. Growth, 41 (1977) 103-108.
J. Cryst. Growth, 98 (1989) 302-308.
J. Cryst. Growth, 117 (1992) 75-79.
J. Cryst. Growth, 117 (1992) 80-84.
J. Cryst. Growth, 86 (1998) 132-137.

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