Process for producing silicon single crystals

Details Process for producing silicon single crystals Process for producing silicon single crystals

1994-10-13

1995-12-12

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes joining independent crystals

117 28, C30B 1534

Patent

active

054740193

ABSTRACT:
A process and apparatus for producing silicon single crystals with excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the pulled-up silicon single crystal without loss of its rate of pulling. The process of producing silicon single crystals by pulling up the single crystal from a melt of material of the single crystal imposes a certain average temperature gradient on the grown single crystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and pulling shaft with which a single crystal is pulled up from the melt of the material in the crucible. The ratio of length h of the heating element to the inside diameter .phi. of the crucible is adjusted so as to be between 0.2 and 0.8 whereby the temperature gradient can be maintained below 2.5.degree. C./mm.

REFERENCES:
patent: 5248378 (1993-09-01), Oda et al.
Japanese Extended Abstracts (The 38th Spring Meeting, 1991); No. 1, The Japan Society of Applied Physics and Related Societies (Mar. 28-31, 1991), "Studies on Crystal Growing Conditions Concerning with Vox Failure," K. Kitagawa et al.
Japanese Extended Abstracts (The 39th Spring Meeting, 1992); The Japan Society of Applied Physics and Related Societies (Mar. 28-31, 1992), "Influence of Thermal History in CZ Crystal Growth Process on Dielectric Strength of Gate Oxide Films," Y. Komatsu et al.

Affiliated with

Also associated with

Rating

Process for producing silicon single crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing silicon single crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing silicon single crystals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1353984