Process for producing silicon single crystal

Details Process for producing silicon single crystal Process for producing silicon single crystal

1993-02-01

1994-08-23

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 33, 117932, C30B 2906

Patent

active

053404343

ABSTRACT:
A process for producing a silicon single crystal is disclosed which comprises the steps of providing a silicon melt in a crucible, feeding grains of silicon polycrystal to the silicon melt and pulling up a silicon single crystal from the silicon melt. The concentration of residual hydrogen in the grains of silicon polycrystal is more than 10 ppmwt and less than 100 ppmwt. The process prevents the silicon single crystal from being polycrystalline.

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patent: 4980015 (1990-12-01), Ono et al.
patent: 5009863 (1991-04-01), Shima et al.
patent: 5037503 (1991-08-01), Kajimoto et al.
patent: 5126114 (1992-06-01), Kamio et al.
patent: 5242531 (1993-09-01), Klingshirn et al.
Database WPIL, No. 90-251 067, Derwent Publications Ltd., London, GB (1990).

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