Compositions – Inorganic luminescent compositions – Tungsten containing
Patent
1994-10-13
1998-09-22
Lovering, Richard D.
Compositions
Inorganic luminescent compositions
Tungsten containing
252314, 423350, 117935, 23294R, 25037001, 428938, B01J 1300, C30B 2906, B01D 700
Patent
active
058110305
ABSTRACT:
Silicon thin films of superior resistivity useful for, e.g., semiconductor elements in solar cells, are formed by coating and drying silicon vaporized in the presence of hydrogen alone or hydrogen and an inert gas, followed by contacting the thus produced silicon particles with solvent to form a silicon colloid. Preferably, the silicon colloid is produced by a process which comprises vaporizing silicon in an atmosphere consisting essentially of hydrogen and up to 10 mol of an inert gas per mol of hydrogen; condensing silicon vaporized in the first step to form fine silicon particles; bringing the silicon particles into contact with a solvent to cover the silicon particles with solvent, and collecting the solvent covered silicon particles to obtain the silicon colloid.
REFERENCES:
patent: 5510095 (1996-04-01), Aratani et al.
Hawley's Condensed Chemical Dictionary, 10th Edition, (Van Nostrand Reinhold Company Inc., NY, NY) pp. 299-300, 1987.
Hackh's Chemical Dictionary, (McGraw-Hill, Inc., NY, NY) pp. 168-169, 1969.
Patent Abstracts Of Japan, Abstract Group No. C0987, Abstract vol.16, No. 455, JP04-161247, Sep. 22, 1992.
Wada & Ichikawa, A Method of Preparation of Finely Dispersed Ultrafine Particles, Japanese Journal of Applied Physics, vol. 15, No. 5, May, 1976, pp. 755-756.
Kimura et al., "The study of Metal Colloids Produced by Means of Gas Evaporation Techniques. I. Preparation Method and Optical Properties in Ethanol", Bull. Chem. Soc. Jpn., vol. 56, No. 12, 3578-3584 (1983).
Lovering Richard D.
Metzmaier Daniel S.
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