Process for producing silicon carbide whiskers

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

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423346, C01B 3136

Patent

active

047895365

ABSTRACT:
A method of manufacturing silicon carbide whiskers in which silicon and carbon containing feedstock is placed on a series of gas permeable supports and passed through a reaction zone. The feedstock is maintained at 1500.degree. C. to 1700.degree. C. between forty to eighty minutes while the off gases from other reacting feedstock is permitted to pass from one support to another. In this manner uniformity of environment is maintained to produce high quality silicon carbide whiskers having average diameters by mass between 1 and 1.5 microns.

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