Process for producing silicon carbide platelets

Details Process for producing silicon carbide platelets Process for producing silicon carbide platelets

1991-07-15

1993-11-02

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

501 88, 156603, C01B 3136, C30B 2500, C30B 2936

Patent

active

052581705

ABSTRACT:
A process for producing silicon carbide platelets having a size of 20 .mu.m or less, and the platelets so produced. The process comprises reacting particles of carbon from a source containing less than 0.2% by weight of iron, with silica or a silica precursor at a temperature in the range of 1800.degree.-2100.degree. C. under an inert atmosphere in the presence of 0.2-10% by weight of an oxide or oxide precursor of Ca, Mg, Al, W, Ce or Cu; 0.1-10% by weight of boron, relative to the weight of SiO.sub.2, and preferably 0.1-10% by weight of the reaction mixture of alpha silicon carbide particles having a size of 5 .mu.m or less. The carbon is preferably in the form of particles of less than 50 .mu.m and the silica or precursor is preferably in the form of particles of less than about 45 .mu.m. The weight ratio of silica to carbon is greater than 1.76:1. The carbon source is preferably a pure form of carbon, e.g. graphite or amorphous carbon. The resulting small SiC platelets are substantially unagglomerated, have a high percentage (up to 95%) of small (< 20 .mu.m) platelets and preferably have an aspect ratio greater than 5. The platelets can be used as reinforcements for ceramic, metal and polymeric matrix materials.

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