Process for producing silicon carbide material

Details Process for producing silicon carbide material Process for producing silicon carbide material

1995-04-10

1997-04-08

Langel, Wayne

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423345, 501 88, C01B 3136

Patent

active

056185103

ABSTRACT:
A silicon carbide material in the form of fibers, sheets or three-dimensionally structured articles useful as a reinforcing material and heat-insulating material, is produced by reacting an activated porous carbon material in the form of, for example, fibers, sheets or three-dimensionally structured articles, and having a specific surface area of 100 to 2500 m.sup.2 /g, with silicon monoxide gas at a temperature of 800.degree. C. to 2000.degree. C. and then heat-treating the resultant silicon carbide material in a non-oxidative gas atmosphere containing nitrogen and substantially no oxygen at a temperature of 800.degree. C. to 2000.degree. C.

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patent: 4915924 (1990-04-01), Nadkarni et al.
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