Process for producing silicon carbide heating elements

Details Process for producing silicon carbide heating elements Process for producing silicon carbide heating elements

1985-03-01

1987-05-26

Derrington, James

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

264 65, 264 66, 501 90, C04B 3556

Patent

active

046684522

ABSTRACT:
A process for producing a silicon carbide heating element is disclosed comprising: adding boron or a boron compound in an amount corresponding to from 0.3 to 3.0% by weight as boron, and carbon or a carbon compound in an amount corresponding to from 0.1 to 6.0% by weight as carbon, to a SiC powder having an average particle size of 1.0.mu. or less; blending and molding the mixture; conducting a primary sintering in vacuum or in an inert atmosphere, except nitrogen; and thereafter conducting a secondary sintering at from 1500.degree. to 2300.degree. C. in a pressurized nitrogen atmosphere to produce a silicon carbide heating element having a density of at least 80% based on the theoretical density and an electrical resistivity of 1.0 .OMEGA.-cm or less.

REFERENCES:
patent: 4004934 (1977-01-01), Prochazka
patent: 4120827 (1978-10-01), Boos
patent: 4336216 (1982-06-01), Watanabe et al.
Prochazka et al., Atmosphere Effects in Sintering of Silicon Carbide, Technical Information Series, General Electric Co., Oct. 1978.

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