Process for producing silicon carbide-base complex

Details Process for producing silicon carbide-base complex Process for producing silicon carbide-base complex

1993-07-12

1995-01-10

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

501 88, C01B 3136

Patent

active

053805119

ABSTRACT:
A process for producing silicon carbide-base complex is disclosed. In the process of this invention, a silicon carbide-base complex is produced by means of depositing carbon produced by means of pyrolysis of a gas comprising a hydrocarbon or a hydrocarbon halide on a porous synthesized silica glass body. As a result, the process of manufacture according to the present invention is capable of producing a high purity and a high strength silicon carbide-base material, which is useful as a jig for producing semiconductors, for example, a heat resistance jig material such as a process tube for wafer boats used for heat doping operation.

REFERENCES:
patent: 4028149 (1977-06-01), Deines et al.
patent: 4327066 (1982-04-01), Seiyima
patent: 4456634 (1984-06-01), Galasso et al.
Patent Abstracts of Japan, vol. 13, No. 326, Jul. 24, 1989, Kokai-No. 1-103 958.

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