Process for producing silicon carbide

Details Process for producing silicon carbide Process for producing silicon carbide

1995-07-19

1997-07-29

Langel, Wayne

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423345, C01B 3136

Patent

active

056519508

ABSTRACT:
Disclosed is a process for producing silicon carbide. The process includes the steps of (1) mixing .beta.-resin extracted from coal-tar pitch with .alpha.-resin and silica gel; (2) after being dried, grinding the mixture to powder; (3) heating the powder in an atmosphere of nitrogen with a temperature in the range from 300.degree. C. to 480.degree. C. until mesophase is cultured; and (4) proceeding the heat treatment with a higher temperature in the range from 900.degree. C. to 1200.degree. C. for a period in the range from 2 to 7 hours. By the process, the production of silicon carbide can be carried out at low temperatures so that it is cost-effective in energy consumption.

REFERENCES:
patent: 4410502 (1983-10-01), Yamaguchi et al.
patent: 4500504 (1985-02-01), Yamamoto
patent: 4963286 (1990-10-01), Coyle et al.

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