Process for producing silicide or silicon gates for an integrate

Details Process for producing silicide or silicon gates for an integrate Process for producing silicide or silicon gates for an integrate

1985-09-30

1987-07-14

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29579, 29578, 29591, 148DIG147, 156653, H01L 21283

Patent

active

046793011

ABSTRACT:
A process for forming closely spaced silicon or silicon-silicide gate electrodes for an integrated circuit involving the successive deposition over the semiconductive substrate of layers of silicon oxide, polycrystalline silicon, a metal, for example, tantalum which can be converted to a silicide, an oxide layer and a masking layer. Then the masking layer is patterned by photolithography and the exposed oxide layer etched in a fashion to undercut the overlying masking layer to leave an overhang. Then the exposed metal layer is removed, and the metal forming a silicide redeposited through the opening in the masking layer on the central portion of the exposed polycrystalline corresponding to the opening. The metal is then converted to a silicide and the polycrystalline silicon free of the silicide is removed.

REFERENCES:
patent: 3866310 (1975-02-01), Driver et al.
patent: 3908262 (1975-09-01), Stein
patent: 4077111 (1978-03-01), Driver et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4196507 (1980-04-01), Baptiste
patent: 4470189 (1984-09-01), Roberts et al.
patent: 4525919 (1985-07-01), Fabian
patent: 4545114 (1985-10-01), Ito et al.
S. P. Murarka, "Refractory Silicided for Integrated Circuit", J. Vac. Sci. Technology 17(4), Jul./Aug. 1980 pp. 775-792.

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