Coating processes – Direct application of electrical – magnetic – wave – or... – Polymerization of coating utilizing direct application of...
Reexamination Certificate
2005-06-07
2005-06-07
Feely, Michael J. (Department: 1712)
Coating processes
Direct application of electrical, magnetic, wave, or...
Polymerization of coating utilizing direct application of...
C427S096400, C428S446000
Reexamination Certificate
active
06902771
ABSTRACT:
A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si—C—Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.
REFERENCES:
patent: 6132814 (2000-10-01), Livesay et al.
patent: 6177143 (2001-01-01), Treadwell et al.
patent: 6204201 (2001-03-01), Ross
patent: 6207555 (2001-03-01), Ross
patent: 6271146 (2001-08-01), Ross
patent: 6319655 (2001-11-01), Wong et al.
patent: 6358670 (2002-03-01), Wong et al.
patent: 6395607 (2002-05-01), Chung
patent: 6426127 (2002-07-01), Ross et al.
patent: 6489225 (2002-12-01), Ross et al.
patent: 6548899 (2003-04-01), Ross
patent: 6582777 (2003-06-01), Ross et al.
patent: 2003/0008481 (2003-01-01), Ross et al.
patent: 2003/0089992 (2003-05-01), Rathi et al.
patent: 2003/0102084 (2003-06-01), Livesay et al.
patent: 0 921 561 (1999-06-01), None
patent: 1 050 601 (2000-11-01), None
patent: 9246232 (1997-09-01), None
patent: 2001015500 (2001-01-01), None
patent: WO 97/00535 (1997-01-01), None
patent: WO 99/36953 (1999-07-01), None
McClatchie, S. et al. “Low Dielectric Constant Oxide Films Deposited Using CVD Techniques”, Dumic Conference Proceedings, Feb. 1998, pp. 311-318.
J.J. Yang. et al., “Electron Beam Curing of Siloxane SOG for Non-etch Back Process”, Advanced Metallization & Interconnect Systems for ULSI Applications in 1996: Materials Research Society Conference Proceedings. ed. Robert Havemann. et al., May 1997, pp. 505-509.
J.J. Yang, et al., “Integration of Spin-on Low-k Dielectrics Using E-Beam Curing for ULSI Multilevel Interconnects”, Advanced Metallization and Interconnect Systems for ULSI Applications in 1997: Materials Research Society Conference Proceedings. ed. R. Cheung, et al., Mar. 1999, pp. 359-365.
U.S. Appl. No. 09/778,822, filed Feb. 8, 2001, Pending.
U.S. Appl. No. 09/670,547, filed Sep. 27, 2000, Pending.
U.S. Appl. No. 09/669,859, filed Sep. 27, 2000, Pending.
U.S. Appl. No. 09/770,289, filed Jan. 29, 2001, Pending.
Shiota Atsushi
Sumiya Kouji
Feely Michael J.
JSR Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
LandOfFree
Process for producing silica-based film, silica-based film,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing silica-based film, silica-based film,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing silica-based film, silica-based film,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3473450