Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1994-10-14
1995-07-11
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
423349, 117 7, 437 5, H01L 3118
Patent
active
054311276
ABSTRACT:
A method of manufacturing semiconductor particles (30) of uniform mass. A template (12) is used to meter out uniform mass piles (28) of semiconductor feedstock upon a refractory layer (14). These piles (28) of semiconductor feedstock are then melted briefly to obtain semiconductor particles (30) of uniform mass. Silica is the preferred refractory layer, and is separated from the particles after the melt procedure. Subsequent melt procedures can be implemented to ultimately obtain perfect spheres of the semiconductor material. The present invention is well suited for forming semiconductor spheres to be implemented in photovoltaic solar cells. Semiconductor grade or metallurgical grade feedstock can be implemented to obtain particles of high purity. High yields of uniformly massed spheres can be obtained to produce high efficiency photovoltaic cells at a moderate cost.
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Conklin Harvey L.
Stevens Gary D.
Breneman R. Bruce
Donaldson Richard L.
Fleck Linda J.
Kesterson James C.
Klinger Robert C.
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