Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1976-04-08
1977-06-28
Rutledge, L. DeWayne
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 148174, 148187, 357 24, 357 41, 357 52, 357 59, H01L 2128, H01L 2122, H01L 2978
Patent
active
040316084
ABSTRACT:
A semiconductor memory device provided with one transferring electrode, one gate electrode and one diode of a charge coupled device is produced by a process with a reduced number of steps of diffusion and patterning. Both electrodes consist of doped polycrystalline silicon and both are electrically connected to a resistive layer which consists of non-doped polycrystalline silicon. A potential barrier between the region of both electrodes is removed due to the resistive layer. The resistive layer is formed by utilization of a two stage deposition of the polycrystalline silicon layer with appropriate masking steps.
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Takei Akira
Togei Ryoiku
Wada Kunihiko
Fujitsu Ltd.
Rutledge L. Dewayne
Saba W. G.
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