Process for producing semiconductor memory device

Details Process for producing semiconductor memory device Process for producing semiconductor memory device

1976-03-30

1976-12-14

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 357 24, B01J 1700

Patent

active

039966585

ABSTRACT:
A distance between two electrodes of a CCD device is reduced to an extremely small value, thereby increasing the memory density, of the CCD device. In the process of the present invention, upon formation of a first electrode, an insulating layer is formed on the entire top surface of the semiconductor wafer. The material of another electrode is then placed on the entire top surface of the wafer. These layers are then selectively removed to form a CCD structure.

REFERENCES:
patent: 3752711 (1973-08-01), Kooi
patent: 3852104 (1974-12-01), Kooi
patent: 3899372 (1975-08-01), Esch
patent: 3936331 (1976-02-01), Luce

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