Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1974-12-16
1976-10-19
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148186, 148187, 148 15, 252 623GA, 252 623E, H01L 21225
Patent
active
039869059
ABSTRACT:
In a high temperature solid-solid diffusion process for diffusing impurities into a semiconductor body from a dopant source material, semiconductor surface attack is prevented by the presence of a layer comprising particles of a material substantially inert to the diffusion between the semiconductor body and dopant source material. Uniform deep regions and/or regions of high conductivity can be obtained, if desired.
REFERENCES:
patent: 3354005 (1967-11-01), Lepiane et al.
patent: 3532563 (1970-10-01), Genser
patent: 3615943 (1971-10-01), Genser
patent: 3630793 (1971-12-01), Christensen
patent: 3660156 (1972-05-01), Schmidt
patent: 3789023 (1974-01-01), Ritchie
patent: 3801384 (1974-04-01), Schmidt
patent: 3837873 (1974-09-01), Pollack et al.
Gilster Peter S.
Monsanto Company
Ozaki G.
LandOfFree
Process for producing semiconductor devices with uniform junctio does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing semiconductor devices with uniform junctio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing semiconductor devices with uniform junctio will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-100206