Process for producing semiconductor devices with uniform junctio

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148186, 148187, 148 15, 252 623GA, 252 623E, H01L 21225

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active

039869059

ABSTRACT:
In a high temperature solid-solid diffusion process for diffusing impurities into a semiconductor body from a dopant source material, semiconductor surface attack is prevented by the presence of a layer comprising particles of a material substantially inert to the diffusion between the semiconductor body and dopant source material. Uniform deep regions and/or regions of high conductivity can be obtained, if desired.

REFERENCES:
patent: 3354005 (1967-11-01), Lepiane et al.
patent: 3532563 (1970-10-01), Genser
patent: 3615943 (1971-10-01), Genser
patent: 3630793 (1971-12-01), Christensen
patent: 3660156 (1972-05-01), Schmidt
patent: 3789023 (1974-01-01), Ritchie
patent: 3801384 (1974-04-01), Schmidt
patent: 3837873 (1974-09-01), Pollack et al.

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