Process for producing semiconductor devices

Details Process for producing semiconductor devices Process for producing semiconductor devices

1975-02-28

1977-01-04

Esposito, Michael F.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 357 50, 427 93, 427 94, 427 95, 428446, 29578, 156 17, H01L 2176, H01L 2704

Patent

active

040014657

ABSTRACT:
A ring or lattice-shaped groove or trench is etched into a surface of a Si monocrystal layer. At least one boundary of the so-etched groove or trench is coated with a strip-shaped layer of an oxidation-blocking material, such as Si.sub.3 N.sub.4 and the area of the substrate adjacent to the Si.sub.3 N.sub.4 layer and/or the substrate area enclosed by such layer is provided with a relatively thick SiO.sub.2 layer which extends deeper into the Si surface than does the SiN.sub.4 layer, while the Si surface within the groove or trench remains uncoated. The so-obtained arrangement is then thermally oxidized under conditions sufficient to at least partially fill the groove or trench with SiO.sub.2. Thereafter, the oxidation-blocking layer and at least a part of the SiO.sub.2 layer which is outside the ring or lattice-shaped trench is removed by a suitable etchant from the monocrystalline surface and the thus uncovered Si surface is further processed to produce small pn-junctions.

REFERENCES:
patent: 3719535 (1973-03-01), Zoroglu
patent: 3755014 (1973-08-01), Appels
patent: 3899372 (1975-08-01), Esch
patent: 3900350 (1975-08-01), Appels
Rideout et al., IBM Tech. Disclosure Bulletin, "Fabricating . . . . Substrates," vol. 17, No. 3, pp. 949-951 (Aug. 1974).
Appels et al., Phillips Research Reports, "Local Oxidation of Silicon," No. 26, pp. 157-165 (1971).

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