Process for producing semiconductor device comprising two step a

Details Process for producing semiconductor device comprising two step a Process for producing semiconductor device comprising two step a

1992-11-20

1995-05-30

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 148DIG3, H01L 21324, H01L 21336

Patent

active

054200792

ABSTRACT:
The disclosed invention is a process for fabricating a semiconductor device comprising the steps of:

REFERENCES:
patent: 4818714 (1989-04-01), Haskell
patent: 5015595 (1991-05-01), Wollesen
patent: 5183770 (1993-02-01), Ayukawa et al.
patent: 5217912 (1993-06-01), Ayukawa et al.
Tokuyama, "Application of Laser Annealing to Silicon Device Fabrication", Laser and Electron Beam Processing of Materials, Academic Press, Inc., 1980, pp. 608-620.
Gibbons et al., "Application of CW Beam Processing to Semiconductor Device Fabrication", Laser and Electron Beam Processing of Materials, Academic Press, Inc., pp. 593-607.
Dvurechensky et al., "Laser Annealing of Ion-Implanted Semiconductors", Laser-Solid Interactions and Laser Processing-1978, American Institute of Physics, 1979, pp. 245-258.
Chu et al., "Structure Stability of Arsenic-Implanted Si After Pulsed Laser Irradiation", Laser and Electron Beam Processing of Materials, Academic Press, Inc., 1980, pp. 253-259.
White et al., "Laser Annealing of Ion Implanted Silicon", Laser-Solid Interactions and Laser Processing--1978, American Institute of Physics, 1979, pp. 275-290.
Celler et al., "CO.sub.2 Laser Annealing of Ion-Implanted Silicon", Laser-Solid Interactions and Laser Processing--1978, American Institute of Physics, 1979, pp. 381-386.
Johnson et al., "Electronic Defect Levels in Self-Implanted CW Laser-Annealed Silicon", Appl. Phys. Lett., vol. 34, No. 10, 15 May 1979, pp. 704-706.
Tamura et al., "Lattice Defects in High-Dose As Implantation into Localized Si Area", Jap. J. Appl. Phys., vol. 27, No. 12, Dec. 1988, pp. 2209-2217.

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