Process for producing semiconductor device

Details Process for producing semiconductor device Process for producing semiconductor device

1992-03-05

1994-02-15

Kunemund, Robert

Fishing, trapping, and vermin destroying

437247, 437946, 148DIG60, H01L 21322, H01L 21324

Patent

active

052866580

ABSTRACT:
A semiconductor device is produced by a process for intrinsic gettering heat treatment of a silicon crystal in which the concentration of C--O complex defects destined to form seeds for oxygen precipitation in the silicon crystal is increased or an amount of oxygen precipitate in the silicon crystal is controlled, to thereby eliminate the dispersion of the amount from one crystal to another. In the heat treatment of the silicon crystal, the amount of oxygen precipitation can be controlled with a high accuracy.

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Ghandi, "VLSI Fabrication Principles", John Wiley & Sons, 1983, p. 29.
Wolf et al., "Silicon Processing for the VLSI Era, vol. 1: Process Technology", Lattice Press, 1986, pp. 18-21 and 66-70.
Craven et al, "Internal Gettering in Silicon", Solid State Technology/Jul. 1981, pp. 55-61.

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