Process for producing semiconductor device

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C029S830000, C029S832000, C029S840000, C156S230000

Reexamination Certificate

active

07487586

ABSTRACT:
A process for semiconductor device production by which the reliability of connection with bumps can be easily heightened with higher certainty. The process for producing a semiconductor device comprising a substrate having bumps formed thereon, comprises covering the bumps with an adhesive film which has a modulus of elasticity (−55° C.) of from 100 MPa to 5 GPa and has a thickness corresponding to from 5 to 40% of the height of the bumps, and then disposing the adhesive film on the substrate so that the bumps pierce through the adhesive film and come to protrude therefrom.

REFERENCES:
patent: 5757078 (1998-05-01), Matsuda et al.
patent: 6652688 (2003-11-01), Matsumura et al.
patent: 2000-208547 (2000-07-01), None
patent: 2003-077944 (2003-03-01), None
patent: WO 02/24391 (2002-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for producing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4100278

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.