Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-07-26
2005-07-26
Thompson, Craig A. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S055000, C257S063000, C257S065000, C257S200000, C257S616000
Reexamination Certificate
active
06921914
ABSTRACT:
A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1-xGex(x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1-yGeylayer, a thin strained Si1-zGezlayer and another relaxed Si1-yGeylayer. Hydrogen ions are then introduced into the strained SizGezlayer. The relaxed Si1-yGeylayer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si1-yGeylayer remains on the second substrate. In another exemplary embodiment, a graded Si1-xGexis deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.
REFERENCES:
patent: 4010045 (1977-03-01), Ruehrwein
patent: 4704302 (1987-11-01), Bruel et al.
patent: 4710788 (1987-12-01), Dämbkes et al.
patent: 4969031 (1990-11-01), Kobayashi et al.
patent: 4987462 (1991-01-01), Kim et al.
patent: 4990979 (1991-02-01), Otto
patent: 4997776 (1991-03-01), Harame et al.
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5091767 (1992-02-01), Bean et al.
patent: 5155571 (1992-10-01), Wang et al.
patent: 5166084 (1992-11-01), Pfiester
patent: 5177583 (1993-01-01), Endo et al.
patent: 5202284 (1993-04-01), Kamins et al.
patent: 5207864 (1993-05-01), Bhat et al.
patent: 5208182 (1993-05-01), Narayan et al.
patent: 5212110 (1993-05-01), Pfiester et al.
patent: 5221413 (1993-06-01), Brasen et al.
patent: 5240876 (1993-08-01), Gaul et al.
patent: 5241197 (1993-08-01), Murakami et al.
patent: 5250445 (1993-10-01), Bean et al.
patent: 5285086 (1994-02-01), Fitzgerald
patent: 5291439 (1994-03-01), Kauffmann et al.
patent: 5298452 (1994-03-01), Meyerson
patent: 5310451 (1994-05-01), Tejwani et al.
patent: 5316958 (1994-05-01), Meyerson
patent: 5346848 (1994-09-01), Grupen-Shemansky et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5399522 (1995-03-01), Ohori
patent: 5413679 (1995-05-01), Godbey
patent: 5424243 (1995-06-01), Takasaki
patent: 5426069 (1995-06-01), Selvakumar et al.
patent: 5426316 (1995-06-01), Mohammad
patent: 5439843 (1995-08-01), Sakaguchi et al.
patent: 5442205 (1995-08-01), Brasen et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5462883 (1995-10-01), Dennard et al.
patent: 5476813 (1995-12-01), Naruse
patent: 5479033 (1995-12-01), Baca et al.
patent: 5484664 (1996-01-01), Kitahara et al.
patent: 5523243 (1996-06-01), Mohammad
patent: 5523592 (1996-06-01), Nakagawa et al.
patent: 5534713 (1996-07-01), Ismail et al.
patent: 5536361 (1996-07-01), Kondo et al.
patent: 5540785 (1996-07-01), Dennard et al.
patent: 5548128 (1996-08-01), Soref et al.
patent: 5572043 (1996-11-01), Shimizu et al.
patent: 5596527 (1997-01-01), Tomioka et al.
patent: 5607876 (1997-03-01), Biegelsen et al.
patent: 5617351 (1997-04-01), Bertin et al.
patent: 5630905 (1997-05-01), Lynch et al.
patent: 5659187 (1997-08-01), Legoues et al.
patent: 5683934 (1997-11-01), Candelaria
patent: 5698869 (1997-12-01), Yoshimi et al.
patent: 5714777 (1998-02-01), Ismail et al.
patent: 5728623 (1998-03-01), Mori
patent: 5739567 (1998-04-01), Wong
patent: 5759898 (1998-06-01), Ek et al.
patent: 5777347 (1998-07-01), Bartelink
patent: 5786612 (1998-07-01), Otani et al.
patent: 5786614 (1998-07-01), Chuang et al.
patent: 5792679 (1998-08-01), Nakato
patent: 5808344 (1998-09-01), Ismail et al.
patent: 5847419 (1998-12-01), Imai et al.
patent: 5863830 (1999-01-01), Bruel et al.
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5882987 (1999-03-01), Srikrishnan
patent: 5891769 (1999-04-01), Hong et al.
patent: 5906708 (1999-05-01), Robinson et al.
patent: 5906951 (1999-05-01), Chu et al.
patent: 5912479 (1999-06-01), Mori et al.
patent: 5923046 (1999-07-01), Tezuka et al.
patent: 5943560 (1999-08-01), Chang et al.
patent: 5963817 (1999-10-01), Chu et al.
patent: 5966622 (1999-10-01), Levine et al.
patent: 5993677 (1999-11-01), Biasse et al.
patent: 5998807 (1999-12-01), Lustig et al.
patent: 6013134 (2000-01-01), Chu et al.
patent: 6013563 (2000-01-01), Henley et al.
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6033974 (2000-03-01), Henley et al.
patent: 6033995 (2000-03-01), Muller
patent: 6058044 (2000-05-01), Sugiura et al.
patent: 6059895 (2000-05-01), Chu et al.
patent: 6074919 (2000-06-01), Gardner et al.
patent: 6096590 (2000-08-01), Chan et al.
patent: 6103559 (2000-08-01), Gardner et al.
patent: 6103597 (2000-08-01), Aspar et al.
patent: 6103599 (2000-08-01), Henley et al.
patent: 6107653 (2000-08-01), Fitzgerald
patent: 6111267 (2000-08-01), Fischer et al.
patent: 6117750 (2000-09-01), Bensahel et al.
patent: 6130453 (2000-10-01), Mei et al.
patent: 6133799 (2000-10-01), Favors, Jr. et al.
patent: 6140687 (2000-10-01), Shimomura et al.
patent: 6143636 (2000-11-01), Forbes et al.
patent: 6153495 (2000-11-01), Kub et al.
patent: 6154475 (2000-11-01), Soref et al.
patent: 6160303 (2000-12-01), Fattaruso
patent: 6162688 (2000-12-01), Gardner et al.
patent: 6162705 (2000-12-01), Henley et al.
patent: 6184111 (2001-02-01), Henley et al.
patent: 6190998 (2001-02-01), Bruel et al.
patent: 6191007 (2001-02-01), Matsui et al.
patent: 6191432 (2001-02-01), Sugiyama et al.
patent: 6194722 (2001-02-01), Fiorini et al.
patent: 6204529 (2001-03-01), Lung et al.
patent: 6207977 (2001-03-01), Augusto
patent: 6210988 (2001-04-01), Howe et al.
patent: 6218677 (2001-04-01), Broekaert
patent: 6225192 (2001-05-01), Aspar et al.
patent: 6232138 (2001-05-01), Fitzgerald et al.
patent: 6235567 (2001-05-01), Huang
patent: 6242324 (2001-06-01), Kub et al.
patent: 6249022 (2001-06-01), Lin et al.
patent: 6251751 (2001-06-01), Chu et al.
patent: 6251755 (2001-06-01), Furukawa et al.
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6266278 (2001-07-01), Harari et al.
patent: 6271551 (2001-08-01), Schmitz et al.
patent: 6271726 (2001-08-01), Fransis et al.
patent: 6290804 (2001-09-01), Henley et al.
patent: 6291321 (2001-09-01), Fitzgerald
patent: 6303468 (2001-10-01), Aspar et al.
patent: 6313016 (2001-11-01), Kibbel et al.
patent: 6316301 (2001-11-01), Kant
patent: 6323108 (2001-11-01), Kub et al.
patent: 6326667 (2001-12-01), Sugiyama et al.
patent: 6329063 (2001-12-01), Lo et al.
patent: 6335546 (2002-01-01), Tsuda et al.
patent: 6339232 (2002-01-01), Takagi
patent: 6344417 (2002-02-01), Usenko
patent: 6346459 (2002-02-01), Usenko et al.
patent: 6350993 (2002-02-01), Chu et al.
patent: 6352909 (2002-03-01), Usenko
patent: 6355493 (2002-03-01), Usenko
patent: 6368733 (2002-04-01), Nishinaga
patent: 6368938 (2002-04-01), Usenko
patent: 6369438 (2002-04-01), Sugiyama et al.
patent: 6372356 (2002-04-01), Thornton et al.
patent: 6372593 (2002-04-01), Hattori et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6387829 (2002-05-01), Usenko et al.
patent: 6391740 (2002-05-01), Cheung et al.
patent: 6399970 (2002-06-01), Kubo et al.
patent: 6403975 (2002-06-01), Brunner et al.
patent: 6407406 (2002-06-01), Tezuka
patent: 6410371 (2002-06-01), Yu et al.
patent: 6425951 (2002-07-01), Chu et al.
patent: 6429061 (2002-08-01), Rim
patent: 6445016 (2002-09-01), An et al.
patent: 6448152 (2002-09-01), Henley et al.
patent: 6455397 (2002-09-01), Belford
patent: 6458672 (2002-10-01), Henley et al.
patent: 6475072 (2002-11-01), Canaperi et al.
patent: 6489639 (2002-12-01), Hoke et al.
patent: 6514836 (2003-02-01), Belford
patent: 6515335 (2003-02-01), Christiansen et al.
patent: 6521041 (2003-02-01), Wu et al.
patent: 6524935 (2003-02-01), Canaperi et al.
patent: 6534381 (2003-03-01), Cheung et al.
patent: 6555839 (2003-04-01), Fitzgerald et al.
patent: 6573126
Antoniadis Dimitri A.
Cheng Zhi-Yuan
Fitzgerald Eugene A.
Hoyt Judy L.
Goodwin & Procter LLP
Massachusetts Institute of Technology
Thompson Craig A.
LandOfFree
Process for producing semiconductor article using graded... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing semiconductor article using graded..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing semiconductor article using graded... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3376489