Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Patent
1997-12-18
2000-08-08
Picardat, Kevin M.
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
438457, 438459, H01L 2130, H01L 2146
Patent
active
06100166&
ABSTRACT:
A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.
REFERENCES:
patent: 4445965 (1984-05-01), Milnes
patent: 4582559 (1986-04-01), Tanielian et al.
patent: 4816420 (1989-03-01), Bozler et al.
patent: 5273938 (1993-12-01), Lin et al.
patent: 5391257 (1995-02-01), Sullivan et al.
patent: 5397713 (1995-03-01), Hamamoto et al.
patent: 5618739 (1997-04-01), Takahashi et al.
patent: 5670411 (1997-09-01), Yonehara et al.
patent: 5695557 (1997-12-01), Yamagata et al.
Imai, K. et al., "Crystalline Quality of Silicon Layer Formed by Fipos Technology," Journal of Crystal Growth, vol. 63, p. 547 (1983).
Cullen, M.T., et al., "Heteroepitaxial Silicon Characterization: Microstructure as Related to UV Reflectometry," Journal of Crystal Growth, vol. 63, p. 205 (1983).
Van Veen, A., et al., "Helium-Induced Porous Layer Formation in Silicon," Materials Research Society Symposium Proceedings, vol. 107, p. 449 (1987).
Raineri, V., "Silicon-On-Insulator Produced by Helium Implantation and Thermal Oxidation," Applied Physics Letters, vol. 66, p. 3654 (1995).
Baumgart, H., et al., "Light Scattering Topography Characterization of Bonded SOI Wafers," Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, Proceedings vol. 92-7, p. 375 (1991).
Hunt, Charles E., et al., "Thinning of Bonded Wafers: Etch-Stop Approaches," Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, Proceedings vol. 92-7, p. 165.
Yonehara, Takao, et al., "Epitaxial Layer Transfer by Bond and Etch Back of Porous SI," Applied Physics Letters, vol. 64, p. 2108 (1994).
Maszara, W.P., "Silicon-On-Insulator by Wafers Bonding: A Review," Journal of the Electrochemical Society, No. 1, p. 341 (1991).
Harendt, Christine, et al., "Silicon On Insulator Material by Wafer Bonding," Journal of Electronic Materials, vol. 20, p. 267 (1991).
Milnes, A.G., "Peeled Film Technology for Solar Cells," The Conference Record of the Eleventh IEEE Photovoltaic Specialists Conference--1975, May 6-8, 1975, p. 338.
Nishida Shoji
Sakaguchi Kiyofumi
Yamagata Kenji
Yonehara Takao
Canon Kabushiki Kaisha
Collins D. M.
Picardat Kevin M.
LandOfFree
Process for producing semiconductor article does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing semiconductor article, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing semiconductor article will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1149715