Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Patent
1997-11-14
1999-10-12
Picardat, Kevin M.
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
438458, H01L 2130, H01L 2146
Patent
active
059666200
ABSTRACT:
A novel process for producing a semiconductor article is disclosed which comprises the steps of preparing a first substrate constituted of a silicon substrate, a nonporous semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate and the nonporous semiconductor layer; bonding the first substrate to a second substrate to obtain a multiple layer structure with the nonporous semiconductor layer placed inside; separating the multiple layer structure at the ion implantation layer; and removing the ion implantation layer remaining on the separated second substrate.
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Sakaguchi Kiyofumi
Yonehara Takao
Canon Kabshiki Kaisha
Picardat Kevin M.
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