Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2011-08-09
2011-08-09
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
active
07993965
ABSTRACT:
A semiconductive porcelain composition/electrode assembly which is low in room temperature resistivity of 100 Ω·cm or less and is reduced in change with the passage of time due to energization with regard to the semiconductive porcelain composition in which a part of Ba of BaTiO3is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary. Also, there is a process for producing a semiconductive porcelain composition/electrode assembly wherein an electrode is joined to a semiconductive porcelain composition in which a part of Ba of BaTiO3is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary, the process including joining the electrode to the semiconductive porcelain composition, followed by conducting a heat treatment at a temperature of from 100° C. to 600° C. for 0.5 hour to 24 hours.
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U.S. Appl. No. 12/810,336, filed Jun. 2010, Shimada.
U.S. Appl. No. 12/810,336 filed Jun. 24, 2010, Takeshi Shimada, Hitachi Metals, Ltd.
Search Report issued in International Application No. PCT/JP2009/054810 on Jun. 16, 2009.
Ino Kentaro
Shimada Takeshi
Hitachi Metals Ltd.
Le Thao P.
Stein McEwen, LLP
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