Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Patent
1997-03-25
2000-05-02
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
117 2, 117 3, 117 5, 117 6, 117952, C30B 110
Patent
active
060568178
ABSTRACT:
A process for producing a semi-insulating InP single crystal and a semi-insulating InP single crystal are disclosed. The process comprises: a first step heat-treatment for heating an undoped InP single crystal having a concentration of a residual impurity of 0.05 ppmw or less containing at least one of Fe, Co and Cr, at a temperature of not less than 930.degree. C. and less than 1000.degree. C. in an atmosphere of phosphorous vapor pressure in the ampoule which is not less than a dissociation pressure of InP in equilibrium at the temperature and which is not more than 15 atm; and a second step heat-treatment for thereafter heating the InP single crystal at a temperature of not less than 662.degree. C. and less than 900.degree. C. in an atmosphere of phosphorous vapor pressure in the ampoule which is not less than 5 atm nor more than 50 atm. The semi-insulating InP single crystal substrate has a uniformity of mobility not more than 10% on the surface of the substrate.
REFERENCES:
patent: 4601888 (1986-07-01), Besomi et al.
patent: 5493985 (1996-02-01), Bliss et al.
Oda Osamu
Uchida Masayuki
Japan Energy Corporation
Kunemund Robert
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